Packaging

Maximum power dissipation PD(W)

Maximum reverse peak voltage VR(V)

Maximum reverse peak voltage @IR(uA)

maximum forward voltage VF(V)

maximum forward voltage @IF(mA)

Maximum reverse current IR(uA)

Maximum reverse current @VR(V)

Maximum reverse recovery time Trr(ns)

Model Maximum power dissipation PD(W) Maximum reverse peak voltage VR(V) Maximum reverse peak voltage @IR(uA) Maximum forward voltage VF(V) Maximum Forward Voltage@IF(mA) Maximum reverse current IR(uA) Maximum reverse current @VR(V) Maximum reverse recovery time Trr(ns) Encapsulation Specifications

封装

Maximum power dissipation PD(W)

Minimum zener voltage VzMin.(V)

normal zener voltage VzNom.(V)

Maximum zener voltage VzMax.(V)

Zener Voltage@IZT(mA)

Maximum zener impedance ZZT(Ω)

Maximum zener impedance ZZK(Ω)

Maximum zener impedance @IZK(mA)

Maximum reverse current IR(uA)

Maximum reverse current @VR(V)

maximum forward voltage VF(V)

maximum forward voltage @IF(mA)

Model Maximum power dissipation PD(W) Minimum zener voltage VzMin.(V) Normal zener voltage VzNom.(V) Maximum zener voltage VzMax.(V) Zener Voltage@IZT(mA) Maximum zener impedance ZZT(Ω) Maximum zener impedance ZZK(Ω) Maximum Zener Impedance@IZK(mA) Maximum reverse current IR(uA) Maximum reverse current @VR(V) Maximum forward voltage VF(V) Maximum Forward Voltage@IF(mA) Encapsulation Specifications

Packaging

Polarity

printing

Maximum power dissipation PD(W)

Maximum collector current Ic(mA)

Collector-base voltage VCBO(V)

Saturation voltage drop VCE(sat)(V)

collector/base current IC/IB(mA)

Maximum operating frequency fT(MHz)

magnification factor hFE(1)

magnification factor hFE(2)

magnification factor hFE(3)

magnification factor hFE(4)

Model polarity print Maximum power dissipation PD(W) Maximum collector current Ic(mA) Collector-base voltage VCBO(V) Saturation voltage drop VCE(sat)(V) Collector/base current IC/IB(mA) Maximum operating frequency fT(MHz) Amplification factor hFE(1) Amplification factor hFE(2) Amplification factor hFE(3) Amplification factor hFE(4) Encapsulation Specifications

Packaging

printing

Maximum power dissipation PPP(W)

Reverse maximum offset voltage VRWM(V)

Minimum breakdown voltage VB(V)

Test current IT(mA)

Maximum reverse current IR(uA)

Maximum clamping voltage Vc(V)

Maximum clamping voltage Vc(V)

Maximum pulse current Ipp(A)

junction capacitance CT(pF)

Model print Maximum power dissipation PPP(W) Reverse Maximum Offset Voltage VRWM(V) Minimum breakdown voltage VB(V) Test current IT(mA) Maximum reverse current IR(uA) Maximum clamping voltage Vc(V) Maximum clamping voltage Vc(V) Maximum pulse current Ipp(A) Junction capacitance CT(pF) Encapsulation Specifications Internal circuit diagram

Packaging

Polarity

printing

Maximum power dissipation PD(W)

Drain-source voltage VDS(V)

Maximum Drain Leakage Current ID(A)

Drain-source turn-on resistance RDS(on)(Ω)(1)

Drain-source turn-on resistance RDS(on)(Ω)(2)

Drain-source turn-on resistance RDS(on)(Ω)(3)

Anti-static ability

Model polarity print Maximum power dissipation PD(W) Drain-source voltage VDS(V) Maximum Drain Leakage Current ID(A) Drain-source turn-on resistance RDS(on)(Ω)(1) Drain-source turn-on resistance RDS(on)(Ω)(2) Drain-source turn-on resistance RDS(on)(Ω)(3) Anti-static capability Encapsulation Specifications

Packaging

Maximum forward average rectified current I(AV)(A)

maximum reverse peak voltage VRRM(V)

Forward peak surge current IFSM(A)

maximum forward voltage VF(V)

Maximum reverse current IR(uA)

Model Maximum forward average rectified current I(AV)(A) Maximum reverse peak voltage VRRM(V)Forward peak surge current IFSM(A) Maximum forward voltage VF(V) Maximum reverse current IR(uA) Encapsulation Specifications

Packaging

Maximum forward average rectified current I(AV)(A)

maximum reverse peak voltage VRRM(V)

Forward peak surge current IFSM(A)

maximum forward voltage VF(V)

Maximum reverse current IR(uA)

Maximum reverse recovery time Trr(ns)

Model Maximum forward average rectified current I(AV)(A) Maximum reverse peak voltage VRRM(V) Forward peak surge current IFSM(A) Maximum forward voltage VF(V) Maximum reverse current IR(uA) Maximum reverse recovery time Trr(ns) Encapsulation Specifications

Packaging

Maximum forward average rectified current I(AV)(A)

maximum reverse peak voltage VRRM(V)

Forward peak surge current IFSM(A)

maximum forward voltage VF(V)

Maximum reverse current IR(uA)

Model Maximum forward average rectified current I(AV)(A) Maximum reverse peak voltage VRRM(V) Forward peak surge current IFSM(A) Maximum forward voltage VF(V) Maximum reverse current IR(uA) Encapsulation Specifications Internal circuit diagram

Packaging

Maximum forward average rectified current I(AV)(A)

maximum reverse peak voltage VRRM(V)

Forward peak surge current IFSM(A)

maximum forward voltage VF(V)

Maximum reverse current IR(uA)

Maximum reverse recovery time Trr(ns)

Model Maximum forward average rectified current I(AV)(A) Maximum reverse peak voltage VRRM(V) Forward peak surge current IFSM(A) Maximum forward voltage VF(V) Maximum reverse current IR(uA) Maximum reverse recovery time Trr(ns) Encapsulation Specifications Internal circuit diagram

Packaging

Printing one-way

Printing two-way

Maximum power dissipation PPP(W)

Maximum offset voltage V(R)(V)

Maximum reverse current IR(uA)

Minimum breakdown voltage V(BR)(V)

Maximum breakdown voltage V(BR)(V)

Test current IT(mA)

Maximum pulse current Ipp(A)

Maximum clamping voltage Vc(V)

Model unidirectional Model bidirectional printing one-way Bidirectional printing Maximum power dissipation PPP(W) Maximum offset voltage V(R)(V) Maximum reverse current IR(uA) Minimum breakdown voltage V(BR)(V) Maximum breakdown voltage V(BR)(V) Test current IT(mA) Maximum pulse current Ipp(A) Maximum clamping voltage Vc(V) Encapsulation Specifications

Packaging

Maximum power dissipation PD(W)

Minimum zener voltage VzMin.(V)

normal zener voltage VzNom.(V)

Maximum zener voltage VzMax.(V)

Zener Voltage@IZT(mA)

Maximum zener impedance ZZT(Ω)

Maximum zener impedance ZZK(Ω)

Maximum zener impedance @IZK(mA)

Maximum reverse current IR(uA)

Maximum reverse current @VR(V)

maximum forward voltage VF(V)

maximum forward voltage @IF(mA)

Model Maximum power dissipation PD(W) Minimum zener voltage VzMin.(V) Normal zener voltage VzNom.(V) Maximum zener voltage VzMax.(V) Zener Voltage@IZT(mA) Maximum zener impedance ZZT(Ω) Maximum zener impedance ZZK(Ω) Maximum Zener Impedance@IZK(mA) Maximum reverse current IR(uA) Maximum reverse current @VR(V) Maximum forward voltage VF(V) Maximum Forward Voltage@IF(mA) Encapsulation Specifications

Packaging

Polarity

Maximum power dissipation PD(W)

Drain-source voltage VDS(V)

Maximum Drain Leakage Current ID(A)

threshold voltage VTH(V)

Drain-source turn-on resistance RDS(on)(mΩ)(1)

Drain-source turn-on resistance RDS(on)(mΩ)(2)

Drain-source turn-on resistance RDS(on)(mΩ)(3)

Anti-static ability

Model polarity Maximum power dissipation PD(W) Drain-source voltage VDS(V) Maximum Drain Leakage Current ID(A) Threshold voltage VTH(V) Drain-source turn-on resistance RDS(on)(mΩ)(1) Drain-source turn-on resistance RDS(on)(mΩ)(2) Drain-source turn-on resistance RDS(on)(mΩ)(3) Anti-static capability Encapsulation Specifications

Packaging

Minimum turning point voltage VBOmin@C=22nF(V)

Maximum turning point voltage VBOmax@C=22nF(V)

maximum turning point voltage symmetry[|+VBO|-|-VBO|]max(V)

Minimum dynamic turning point voltage|△V±|min(V)

Minimum output voltage VOmin(V)

Maximum turning point current IBOmax(uA)

maximum leakage current IBmax(uA)

maximum rise time trmax(us)

Model Minimum turning point voltage VBOmin@C=22nF(V) Maximum break point voltage VBOmax@C=22nF(V) Maximum break point voltage symmetry [|+VBO|-|-VBO|]max(V) Minimum dynamic turning point voltage|△V±|min(V) Minimum output voltage VOmin(V) Maximum break point current IBOmax(uA) Maximum leakage current IBmax(uA) Maximum rise time trmax(us) Encapsulation Specifications